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STB80NF55L-06 - 80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-CHANNEL 55V - 0.005 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET N-CHANNEL 55V - 0.005 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET

STB80NF55L-06_2856761.PDF Datasheet


 Full text search : 80 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB N-CHANNEL 55V - 0.005 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET N-CHANNEL 55V - 0.005 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET


 Related Part Number
PART Description Maker
HUFA75344S3 HUFA75344S3S HUFA75344P3 HUFA75344G3 1 PIN M STR AU 50 OHM 4 MH
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
75A 55V 0.008 Ohm N-Channel UltraFET Power MOSFETs
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
STB80NF75L STB80NF75L-1 STP80NF75L N-CHANNEL 75V - 0.008 OHM - 80A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
Spansion Inc.
Spansion, Inc.
SPANSION LLC
HRF3205S HRF3205 FN4447 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
From old datasheet system
INTERSIL[Intersil Corporation]
STS11NF3LL N-CHANNEL 30V - 0.008 OHM - 11A SO-8 LOW GATE CHARGE STRIPFET POWER MOSFET
ST Microelectronics
AUIRL3705ZS AUIRL3705ZSTRR AUIRL3705ZL AUIRL3705ZS 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Logic Level Advanced Process Technology
International Rectifier
STB70NF03L N-CHANNEL 30V - 0.008 OHM - 70A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFET
ST Microelectronics
STB70NF3 STB70NF3LL N-CHANNEL 30V - 0.008 ohm - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET N沟道30V 0.008欧姆-0A D2PAK封装,低栅极电荷STripFET功率MOSFET
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
IRF7458PBF 14 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
SMPS MOSFET
IRF[International Rectifier]
HUF75344G304 HUF75344S3S HUF75344G3 HUF75344P3    75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
FAIRCHILD[Fairchild Semiconductor]
HUFA75344G304 HUFA75344S3S HUFA75344G3 HUFA75344P3    75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
FAIRCHILD[Fairchild Semiconductor]
FDMS86101 100V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 12.4 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
Fairchild Semiconductor, Corp.
 
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